Implantation dominated unction depths of low temperature and electron beam annealed As source/drain Regions
Amaratunga, G A J, Knee, N D, Hart, M J and Evans, A G R (1987) Implantation dominated unction depths of low temperature and electron beam annealed As source/drain Regions. IEEE Electron Devices, ED-34, (2), 445-448.
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| Item Type: | Other |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 251004 |
| Date Deposited: | 11 Oct 1999 |
| Last Modified: | 02 Mar 2012 14:01 |
| Contributors: | Amaratunga, G A J (Author) Knee, N D (Author) Hart, M J (Author) Evans, A G R (Author) |
| Date: | 1987 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/251004 |
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