Polysilicon emitter bipolar transistors fabricated by rapid thermal processing
Post, I R C, Ashburn, P, Williams, J D, Moiseiwitsch, N E and Jerome, R C (1993) Polysilicon emitter bipolar transistors fabricated by rapid thermal processing. , 126-134.
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| Item Type: | Other |
|---|---|
| Additional Information: | Organisation: IEEE |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 251020 |
| Date Deposited: | 11 Oct 1999 |
| Last Modified: | 02 Mar 2012 11:56 |
| Contributors: | Post, I R C (Author) Ashburn, P (Author) Williams, J D (Author) Moiseiwitsch, N E (Author) Jerome, R C (Author) |
| Date: | 1993 |
| Additional Information: | Organisation: IEEE |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/251020 |
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