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High temperature millisecond annealing of arsenic implanted silicon

High temperature millisecond annealing of arsenic implanted silicon
High temperature millisecond annealing of arsenic implanted silicon
Atrip, J L
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Evans, A G R
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Logan, J R
e063eb71-9553-4776-b7a6-73a1e2c52003
Jeynes, C
838ab9ab-998e-4eb0-ab12-89fc97df3caf
Atrip, J L
a1fb9f18-3821-4547-92d8-b0082c0c4220
Evans, A G R
c4a3f208-8fd9-491d-870f-ce7eef943311
Logan, J R
e063eb71-9553-4776-b7a6-73a1e2c52003
Jeynes, C
838ab9ab-998e-4eb0-ab12-89fc97df3caf

Atrip, J L, Evans, A G R, Logan, J R and Jeynes, C (1990) High temperature millisecond annealing of arsenic implanted silicon.

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More information

Published date: 1990
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 251028
URI: http://eprints.soton.ac.uk/id/eprint/251028
PURE UUID: 51b14f5f-65d3-443f-bdf3-5aa4273a97b7

Catalogue record

Date deposited: 11 Oct 1999
Last modified: 10 Dec 2021 20:19

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Contributors

Author: J L Atrip
Author: A G R Evans
Author: J R Logan
Author: C Jeynes

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