Physical modelling of the enhanced diffusion of boron due to ion implantation in thin base npn bipolar transistors
Mouis, M., Gregory, H J, Denorme, S, Mathiot, D, Ashburn, P, Robbins, D J and Glasper, J L, Selberherr, S, Stippel, H and Strasser, E (eds.) (1993) Physical modelling of the enhanced diffusion of boron due to ion implantation in thin base npn bipolar transistors. Simulation of Semiconductor Devices and Processes, 5, 141-144.
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| Item Type: | Other |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 251032 |
| Date Deposited: | 11 Oct 1999 |
| Last Modified: | 02 Mar 2012 14:01 |
| Contributors: | Mouis, M. (Author) Gregory, H J (Author) Denorme, S (Author) Mathiot, D (Author) Ashburn, P (Author) Robbins, D J (Author) Glasper, J L (Author) Selberherr, S (Editor) Stippel, H (Editor) Strasser, E (Editor) |
| Date: | 1993 |
| Status: | Published |
| Publisher: | Springer Verlag |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/251032 |
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