Physical modelling of the enhanced diffusion of boron due to ion implantation in thin base npn bipolar transistors


Mouis, M., Gregory, H J, Denorme, S, Mathiot, D, Ashburn, P, Robbins, D J and Glasper, J L,

EditorsEditors Person Id
Selberherr, SUNSPECIFIED
,
EditorsEditors Person Id
Stippel, HUNSPECIFIED
and
EditorsEditors Person Id
Strasser, EUNSPECIFIED
(eds.) (1993) Physical modelling of the enhanced diffusion of boron due to ion implantation in thin base npn bipolar transistors. Simulation of Semiconductor Devices and Processes, 5, 141-144.

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Item Type: Other
Divisions : Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 251032
Accepted Date and Publication Date:
Status
1993Published
Date Deposited: 11 Oct 1999
Last Modified: 31 Mar 2016 13:51
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/251032

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