Physical modelling of the enhanced diffusion of boron due to ion implantation in thin base npn bipolar transistors


Mouis, M., Gregory, H J, Denorme, S, Mathiot, D, Ashburn, P, Robbins, D J and Glasper, J L, Selberherr, S, Stippel, H and Strasser, E (eds.) (1993) Physical modelling of the enhanced diffusion of boron due to ion implantation in thin base npn bipolar transistors. Simulation of Semiconductor Devices and Processes, 5, 141-144.

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Item Type: Other
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 251032
Date Deposited: 11 Oct 1999
Last Modified: 27 Mar 2014 19:52
Publisher: Springer Verlag
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/251032

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