Characterisation of heterojunction bipolar transistors incorporating Si'SiGe epitaxial double layers with n+ emitter implants
Robbins, D J, Leong, W Y, Glasper, J L, Pidduck, A J, Jackson, R, Post, I R C, Shafi, Z A and Ashburn, P (1992) Characterisation of heterojunction bipolar transistors incorporating Si'SiGe epitaxial double layers with n+ emitter implants. , 447-450.
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| Item Type: | Other |
|---|---|
| Additional Information: | Organisation: ESSDERC |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 251037 |
| Date Deposited: | 11 Oct 1999 |
| Last Modified: | 02 Mar 2012 12:57 |
| Contributors: | Robbins, D J (Author) Leong, W Y (Author) Glasper, J L (Author) Pidduck, A J (Author) Jackson, R (Author) Post, I R C (Author) Shafi, Z A (Author) Ashburn, P (Author) |
| Date: | 1992 |
| Additional Information: | Organisation: ESSDERC |
| Status: | Published |
| Publisher: | Elsevier |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/251037 |
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