Characterisation of heterojunction bipolar transistors incorporating Si'SiGe epitaxial double layers with n+ emitter implants


Robbins, D J, Leong, W Y, Glasper, J L, Pidduck, A J, Jackson, R, Post, I R C, Shafi, Z A and Ashburn, P (1992) Characterisation of heterojunction bipolar transistors incorporating Si'SiGe epitaxial double layers with n+ emitter implants. , 447-450.

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Item Type: Other
Additional Information: Organisation: ESSDERC
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 251037
Date Deposited: 11 Oct 1999
Last Modified: 27 Mar 2014 19:52
Publisher: Elsevier
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/251037

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