Thick selective epitaxial growth of silicon at 960oC using silane only
Afshar-Hanaii, N, Bonar, J M, Evans, A G R, Parker, E H C, Starbuck, C M K and Kemhadjian, H A (1992) Thick selective epitaxial growth of silicon at 960oC using silane only. Microelectronic Engineering, 18, 237-246.
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| Item Type: | Other |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 251039 |
| Date Deposited: | 11 Oct 1999 |
| Last Modified: | 02 Mar 2012 11:37 |
| Contributors: | Afshar-Hanaii, N (Author) Bonar, J M (Author) Evans, A G R (Author) Parker, E H C (Author) Starbuck, C M K (Author) Kemhadjian, H A (Author) |
| Date: | 1992 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/251039 |
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