Thick selective epitaxial growth of silicon at 960oC using silane only


Afshar-Hanaii, N, Bonar, J M, Evans, A G R, Parker, E H C, Starbuck, C M K and Kemhadjian, H A (1992) Thick selective epitaxial growth of silicon at 960oC using silane only. Microelectronic Engineering, 18, 237-246.

Download

Full text not available from this repository.

Item Type: Other
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 251039
Date Deposited: 11 Oct 1999
Last Modified: 27 Mar 2014 19:52
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/251039

Actions (login required)

View Item View Item