Epitaxial growth of n+ and p+ polysilicon layers given single and double diffusions
Williams, J D and Ashburn, P (1992) Epitaxial growth of n+ and p+ polysilicon layers given single and double diffusions. Journal of Applied Physics, 72, 3169-3178.
Download
Full text not available from this repository.
| Item Type: | Other |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 251044 |
| Date Deposited: | 11 Oct 1999 |
| Last Modified: | 02 Mar 2012 14:01 |
| Contributors: | Williams, J D (Author) Ashburn, P (Author) |
| Date: | 1992 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/251044 |
Actions (login required)
 |
View Item |
