Epitaxial growth of n+ and p+ polysilicon layers given single and double diffusions


Williams, J D and Ashburn, P (1992) Epitaxial growth of n+ and p+ polysilicon layers given single and double diffusions. Journal of Applied Physics, 72, 3169-3178.

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Item Type: Other
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 251044
Date Deposited: 11 Oct 1999
Last Modified: 27 Mar 2014 19:52
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/251044

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