Fabrication and performance of delta-doped Si n-MESFET grown by MBE


Chan, Q, Willander, M, Carter, J, Thanki, H and Evans, A G R (1993) Fabrication and performance of delta-doped Si n-MESFET grown by MBE. Electronics Letters, 24, (8), 671-672.

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Item Type: Other
Divisions: Faculty of Physical and Applied Science > Electronics and Computer Science > NANO
Item ID: 251155
Date Deposited: 12 Oct 1999
Last Modified: 02 Mar 2012 12:57
Contributors: Chan, Q (Author)
Willander, M (Author)
Carter, J (Author)
Thanki, H (Author)
Evans, A G R (Author)
Date: 1993
Status: Published
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/251155

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