Improved hot electron degradation in nMOSFETs with elevated source and drain structures realised by SEG of silicon using silane only
Afshar-Hanaii, N, Peerlings, J, Evans, A G R and Carter, J C (1993) Improved hot electron degradation in nMOSFETs with elevated source and drain structures realised by SEG of silicon using silane only. Electronics Letters, 29, (17), 1586-1587.
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| Item Type: | Other |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 251156 |
| Date Deposited: | 03 Jul 2000 |
| Last Modified: | 02 Mar 2012 11:56 |
| Contributors: | Afshar-Hanaii, N (Author) Peerlings, J (Author) Evans, A G R (Author) Carter, J C (Author) |
| Date: | 1993 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/251156 |
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