Improved hot electron degradation in nMOSFETs with elevated source and drain structures realised by SEG of silicon using silane only


Afshar-Hanaii, N, Peerlings, J, Evans, A G R and Carter, J C (1993) Improved hot electron degradation in nMOSFETs with elevated source and drain structures realised by SEG of silicon using silane only. Electronics Letters, 29, (17), 1586-1587.

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Item Type: Other
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 251156
Date Deposited: 03 Jul 2000
Last Modified: 27 Mar 2014 19:52
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/251156

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