Electrical stressing of submicrometer MOSFETS with raised source/drain structures realised by selective epitaxial growth of silicon using silane
Waite, A, Evans, A G R and Afshar-Hanaii, N (1994) Electrical stressing of submicrometer MOSFETS with raised source/drain structures realised by selective epitaxial growth of silicon using silane. Electronics letter, 30, (17), 1455-1456.
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| Item Type: | Other |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 251158 |
| Date Deposited: | 12 Oct 1999 |
| Last Modified: | 02 Mar 2012 12:57 |
| Contributors: | Waite, A (Author) Evans, A G R (Author) Afshar-Hanaii, N (Author) |
| Date: | 1994 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/251158 |
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