The use of an interface anneal to control the base current and emitter resistance of pnp polysilicon emitter bipolar transistors
Post, I R C and Ashburn, P (1992) The use of an interface anneal to control the base current and emitter resistance of pnp polysilicon emitter bipolar transistors. IEEE Electron Device Letters, EDL-13, 408-410.
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| Item Type: | Other |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 251159 |
| Date Deposited: | 12 Oct 1999 |
| Last Modified: | 02 Mar 2012 12:57 |
| Contributors: | Post, I R C (Author) Ashburn, P (Author) |
| Date: | 1992 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/251159 |
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