The use of an interface anneal to control the base current and emitter resistance of pnp polysilicon emitter bipolar transistors


Post, I R C and Ashburn, P (1992) The use of an interface anneal to control the base current and emitter resistance of pnp polysilicon emitter bipolar transistors. IEEE Electron Device Letters, EDL-13, 408-410.

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Item Type: Other
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 251159
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1992Published
Date Deposited: 12 Oct 1999
Last Modified: 31 Mar 2016 13:51
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/251159

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