Sidek, R M, Evans, A G R and Kubiak, R A (1999) Reduction of parasitic bipolar transistor action and punchthrough susceptibility in MOSFETs using Si/Si1-x GEx sources and drains. Electronics letters,.
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Published date: 13 October 1999
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 251164
URI: http://eprints.soton.ac.uk/id/eprint/251164
PURE UUID: 747c8cda-24ec-4038-948e-1f0ca2d6449d
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Date deposited: 13 Oct 1999
Last modified: 29 Jan 2020 15:06
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Contributors
Author:
R M Sidek
Author:
A G R Evans
Author:
R A Kubiak
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