Reduction of parasitic bipolar transistor action and punchthrough susceptibility in MOSFETs using Si/Si1-x GEx sources and drains. Electronics letters,
Sidek, R M, Evans, A G R and Kubiak, R A (1999) Reduction of parasitic bipolar transistor action and punchthrough susceptibility in MOSFETs using Si/Si1-x GEx sources and drains. Electronics letters,. Eletronic Letters, 32, (3), 269-270.
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| Item Type: | Other |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 251164 |
| Date Deposited: | 13 Oct 1999 |
| Last Modified: | 02 Mar 2012 13:17 |
| Contributors: | Sidek, R M (Author) Evans, A G R (Author) Kubiak, R A (Author) |
| Date: | 13 October 1999 |
| Status: | Unpublished |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/251164 |
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