Study of Hall and effective mobilities in pseudomorphic Si-IXGex P-Channel metal-oxide semiconductor field-effect transistors at room temperature and 4.2K.
Lander, R J P, Emeleus, C J, McGregor, B M, Parker, E H C, Whall, T E, Evans, A G R and Kennedy, G P (1997) Study of Hall and effective mobilities in pseudomorphic Si-IXGex P-Channel metal-oxide semiconductor field-effect transistors at room temperature and 4.2K. J.Appl. Phys, 82, ((10)), 5210-5216.
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| Item Type: | Other |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 251178 |
| Date Deposited: | 14 Oct 1999 |
| Last Modified: | 02 Mar 2012 14:01 |
| Contributors: | Lander, R J P (Author) Emeleus, C J (Author) McGregor, B M (Author) Parker, E H C (Author) Whall, T E (Author) Evans, A G R (Author) Kennedy, G P (Author) |
| Date: | 1997 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/251178 |
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