Study of Hall and effective mobilities in pseudomorphic Si-IXGex P-Channel metal-oxide semiconductor field-effect transistors at room temperature and 4.2K.


Lander, R J P, Emeleus, C J, McGregor, B M, Parker, E H C, Whall, T E, Evans, A G R and Kennedy, G P (1997) Study of Hall and effective mobilities in pseudomorphic Si-IXGex P-Channel metal-oxide semiconductor field-effect transistors at room temperature and 4.2K. J.Appl. Phys, 82, ((10)), 5210-5216.

Download

Full text not available from this repository.

Item Type: Other
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 251178
Date Deposited: 14 Oct 1999
Last Modified: 27 Mar 2014 19:52
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/251178

Actions (login required)

View Item View Item