TEM study of strain relaxation processes in metastable Si/SiGe/Si structures for heterojunction bipolar transistors


Hockley, M, Tuppen, C G, Gibbings, C J, Shafi, Z A and Ashburn, P (1991) TEM study of strain relaxation processes in metastable Si/SiGe/Si structures for heterojunction bipolar transistors.

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Item Type: Other
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 251182
Date Deposited: 15 Oct 1999
Last Modified: 27 Mar 2014 19:52
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/251182

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