TEM study of strain relaxation processes in metastable Si/SiGe/Si structures for heterojunction bipolar transistors
Hockley, M, Tuppen, C G, Gibbings, C J, Shafi, Z A and Ashburn, P (1991) TEM study of strain relaxation processes in metastable Si/SiGe/Si structures for heterojunction bipolar transistors.
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| Item Type: | Other |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 251182 |
| Date Deposited: | 15 Oct 1999 |
| Last Modified: | 02 Mar 2012 11:56 |
| Contributors: | Hockley, M (Author) Tuppen, C G (Author) Gibbings, C J (Author) Shafi, Z A (Author) Ashburn, P (Author) |
| Date: | 1991 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/251182 |
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