Hockley, M, Tuppen, C G, Gibbings, C J, Shafi, Z A and Ashburn, P (1991) TEM study of strain relaxation processes in metastable Si/SiGe/Si structures for heterojunction bipolar transistors.
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Published date: 1991
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 251182
URI: http://eprints.soton.ac.uk/id/eprint/251182
PURE UUID: 1a6ea8c6-78d0-4a9b-a62d-92268679368e
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Date deposited: 15 Oct 1999
Last modified: 10 Dec 2021 20:20
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Contributors
Author:
M Hockley
Author:
C G Tuppen
Author:
C J Gibbings
Author:
Z A Shafi
Author:
P Ashburn
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