Thermal annealing of metastable and stable Si/SiGe heterojunction bipolar transistors
Thermal annealing of metastable and stable Si/SiGe heterojunction bipolar transistors
Shafi, Z A
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Martin, A S R
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Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Godfrey, D J
86f29c09-10d6-4436-afca-bb65f85bcf6c
Gibbings, C
a69b373d-97b6-40fa-9df8-e464721a30c5
Post, I R C
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Tuppen, C
2fa42534-f9c6-471a-950b-7b8a9985ef39
Jones, M E
d602c51c-a71d-4e85-806c-0fb09bc16ce7
1991
Shafi, Z A
581ca690-0cd9-478e-b74f-4dbb956cab57
Martin, A S R
9f703677-b534-48bf-bd82-039f92671025
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Godfrey, D J
86f29c09-10d6-4436-afca-bb65f85bcf6c
Gibbings, C
a69b373d-97b6-40fa-9df8-e464721a30c5
Post, I R C
20c72d45-7b72-4df1-a487-a23f6b06511e
Tuppen, C
2fa42534-f9c6-471a-950b-7b8a9985ef39
Jones, M E
d602c51c-a71d-4e85-806c-0fb09bc16ce7
Shafi, Z A, Martin, A S R, Ashburn, P, Godfrey, D J, Gibbings, C, Post, I R C, Tuppen, C and Jones, M E
(1991)
Thermal annealing of metastable and stable Si/SiGe heterojunction bipolar transistors.
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Published date: 1991
Additional Information:
Organisation: ESSDERC
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 251195
URI: http://eprints.soton.ac.uk/id/eprint/251195
PURE UUID: e59b1205-5600-44fe-a584-100cdd16e535
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Date deposited: 19 Oct 1999
Last modified: 10 Dec 2021 20:20
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Contributors
Author:
Z A Shafi
Author:
A S R Martin
Author:
D J Godfrey
Author:
C Gibbings
Author:
I R C Post
Author:
C Tuppen
Author:
M E Jones
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