Thermal annealing of metastable and stable Si/SiGe heterojunction bipolar transistors


Shafi, Z A, Martin, A S R, Ashburn, P, Godfrey, D J, Gibbings, C, Post, I R C, Tuppen, C and Jones, M E (1991) Thermal annealing of metastable and stable Si/SiGe heterojunction bipolar transistors. , 135-138.

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Item Type: Other
Additional Information: Organisation: ESSDERC
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 251195
Date Deposited: 19 Oct 1999
Last Modified: 27 Mar 2014 19:52
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/251195

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