Thermal annealing of metastable and stable Si/SiGe heterojunction bipolar transistors
Shafi, Z A, Martin, A S R, Ashburn, P, Godfrey, D J, Gibbings, C, Post, I R C, Tuppen, C and Jones, M E (1991) Thermal annealing of metastable and stable Si/SiGe heterojunction bipolar transistors. , 135-138.
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| Item Type: | Other |
|---|---|
| Additional Information: | Organisation: ESSDERC |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 251195 |
| Date Deposited: | 19 Oct 1999 |
| Last Modified: | 02 Mar 2012 12:18 |
| Contributors: | Shafi, Z A (Author) Martin, A S R (Author) Ashburn, P (Author) Godfrey, D J (Author) Gibbings, C (Author) Post, I R C (Author) Tuppen, C (Author) Jones, M E (Author) |
| Date: | 1991 |
| Additional Information: | Organisation: ESSDERC |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/251195 |
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