The importance of neutral base recombination in compromising the gain of Si/SiGe heterojunction bipolar transistors
Shafi, Z A, Gibbings, C J, Ashburn, P, Post, I R C, Tuppen, C G and Godfrey, D J (1991) The importance of neutral base recombination in compromising the gain of Si/SiGe heterojunction bipolar transistors. IEEE Trans Electron Devices, ED38, 1973-1976.
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| Item Type: | Other |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 251197 |
| Date Deposited: | 19 Oct 1999 |
| Last Modified: | 02 Mar 2012 13:17 |
| Contributors: | Shafi, Z A (Author) Gibbings, C J (Author) Ashburn, P (Author) Post, I R C (Author) Tuppen, C G (Author) Godfrey, D J (Author) |
| Date: | 1991 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/251197 |
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