The importance of neutral base recombination in compromising the gain of Si/SiGe heterojunction bipolar transistors


Shafi, Z A, Gibbings, C J, Ashburn, P, Post, I R C, Tuppen, C G and Godfrey, D J (1991) The importance of neutral base recombination in compromising the gain of Si/SiGe heterojunction bipolar transistors. IEEE Trans Electron Devices, ED38, 1973-1976.

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Item Type: Other
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 251197
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1991Published
Date Deposited: 19 Oct 1999
Last Modified: 31 Mar 2016 13:51
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/251197

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