Investigation of boron diffusion in polysilicon and its application to the design of pnp polysilicon emitter bipolar transistors with shallow emitter junctions


Post, I R C and Ashburn, Peter (1991) Investigation of boron diffusion in polysilicon and its application to the design of pnp polysilicon emitter bipolar transistors with shallow emitter junctions. IEEE Trans Electron Devices, ED38, 2442-2451.

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Item Type: Other
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 251198
Date Deposited: 19 Oct 1999
Last Modified: 27 Mar 2014 19:52
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/251198

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