Investigation of boron diffusion in polysilicon and its application to the design of pnp polysilicon emitter bipolar transistors with shallow emitter junctions
Post, I R C and Ashburn, Peter (1991) Investigation of boron diffusion in polysilicon and its application to the design of pnp polysilicon emitter bipolar transistors with shallow emitter junctions. IEEE Trans Electron Devices, ED38, 2442-2451.
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| Item Type: | Other |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 251198 |
| Date Deposited: | 19 Oct 1999 |
| Last Modified: | 02 Mar 2012 13:39 |
| Contributors: | Post, I R C (Author) Ashburn, Peter (Author) |
| Date: | 1991 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/251198 |
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