Investigation of boron diffusion in polysilicon and its application to the design of pnp polysilicon emitter bipolar transistors with shallow emitter junctions


Post, I R C and Ashburn, Peter (1991) Investigation of boron diffusion in polysilicon and its application to the design of pnp polysilicon emitter bipolar transistors with shallow emitter junctions. IEEE Trans Electron Devices, ED38, 2442-2451.

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Item Type: Other
Divisions : Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 251198
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1991Published
Date Deposited: 19 Oct 1999
Last Modified: 31 Mar 2016 13:51
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/251198

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