Effects of rapid thermal processing on the current gain and emitter resistance of polysilicon emitter bipolar transistors
Castaner, L M, Ashburn, P and Wolstenholme, G R (1991) Effects of rapid thermal processing on the current gain and emitter resistance of polysilicon emitter bipolar transistors. IEEE Electron Device Letters, 12, 10-12.
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| Item Type: | Other |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 251199 |
| Date Deposited: | 19 Oct 1999 |
| Last Modified: | 02 Mar 2012 14:01 |
| Contributors: | Castaner, L M (Author) Ashburn, P (Author) Wolstenholme, G R (Author) |
| Date: | 1991 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/251199 |
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