Electrical method for measuring the emitter depth of shallow bipolar transistors
Post, IRC and Ashburn, P (1990) Electrical method for measuring the emitter depth of shallow bipolar transistors. Electronics Letters, 26, 30-31.
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| Item Type: | Other |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 251831 |
| Date Deposited: | 09 Nov 1999 |
| Last Modified: | 02 Mar 2012 13:18 |
| Contributors: | Post, IRC (Author) Ashburn, P (Author) |
| Date: | 1990 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/251831 |
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