Comparison of silicon bipolar and GaAlAs'GaAs heterojunction bipolar technologies using a propagation delay expression
Ashburn, P, Rezazadeh, A A, Chor, EF and Brunnschweiler, A (1989) Comparison of silicon bipolar and GaAlAs'GaAs heterojunction bipolar technologies using a propagation delay expression. Journal of Solid State Circuits, SC24, 512-519.
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| Item Type: | Other |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 251834 |
| Date Deposited: | 09 Nov 1999 |
| Last Modified: | 02 Mar 2012 11:38 |
| Contributors: | Ashburn, P (Author) Rezazadeh, A A (Author) Chor, EF (Author) Brunnschweiler, A (Author) |
| Date: | 1989 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/251834 |
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