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An investigation of the thermal stability of the interfacial oxide in polysilicon emitter bipolar transistors using high resolution TEM

An investigation of the thermal stability of the interfacial oxide in polysilicon emitter bipolar transistors using high resolution TEM
An investigation of the thermal stability of the interfacial oxide in polysilicon emitter bipolar transistors using high resolution TEM
Wolstenholme, G
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Jorgensen, N
ee67b541-1901-4429-86c8-9a4d070c702d
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Booker, G R
1c5cd067-0dc6-4cd7-9e2c-9adf8ae291e9
Wolstenholme, G
6700d1d9-8f5a-4152-8a0f-78786337a68c
Jorgensen, N
ee67b541-1901-4429-86c8-9a4d070c702d
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Booker, G R
1c5cd067-0dc6-4cd7-9e2c-9adf8ae291e9

Wolstenholme, G, Jorgensen, N, Ashburn, P and Booker, G R (1987) An investigation of the thermal stability of the interfacial oxide in polysilicon emitter bipolar transistors using high resolution TEM.

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More information

Published date: 1987
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 251865
URI: http://eprints.soton.ac.uk/id/eprint/251865
PURE UUID: 02b3cd3f-100a-4da6-8ce6-692eb0ceebad

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Date deposited: 15 Nov 1999
Last modified: 10 Dec 2021 20:23

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Contributors

Author: G Wolstenholme
Author: N Jorgensen
Author: P Ashburn
Author: G R Booker

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