An investigation of the thermal stability of the interfacial oxide in polysilicon emitter bipolar transistors using high resolution TEM
Wolstenholme, G, Jorgensen, N, Ashburn, P and Booker, G R (1987) An investigation of the thermal stability of the interfacial oxide in polysilicon emitter bipolar transistors using high resolution TEM. Journal of Applied Physics, 61, 225-233.
Download
Full text not available from this repository.
| Item Type: | Other |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 251865 |
| Date Deposited: | 15 Nov 1999 |
| Last Modified: | 02 Mar 2012 12:19 |
| Contributors: | Wolstenholme, G (Author) Jorgensen, N (Author) Ashburn, P (Author) Booker, G R (Author) |
| Date: | 1987 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/251865 |
Actions (login required)
 |
View Item |
