Comparison of silicon bipolar and GaAs/GaAlAs heterojunction bipolar technologies for high-speed ECL circuits
Ashburn, P, Rezazadeh, A A, Chor, E F and Brunnschweiler, A (1987) Comparison of silicon bipolar and GaAs/GaAlAs heterojunction bipolar technologies for high-speed ECL circuits. IEEE Bipolar Circuits and Technology Meeting, 61-65.
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| Item Type: | Other |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 251866 |
| Date Deposited: | 15 Nov 1999 |
| Last Modified: | 02 Mar 2012 11:56 |
| Contributors: | Ashburn, P (Author) Rezazadeh, A A (Author) Chor, E F (Author) Brunnschweiler, A (Author) |
| Date: | 1987 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/251866 |
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