Emitter resistance of arsenic and phosphorus doped polysilicon emitter transistors


Chor, E F, Ashburn, P and Brunnschweiler, A (1985) Emitter resistance of arsenic and phosphorus doped polysilicon emitter transistors. Electron Device Letters, EDL-6, 515-518.

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Item Type: Other
Divisions : Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 251867
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1985Published
Date Deposited: 15 Nov 1999
Last Modified: 31 Mar 2016 13:52
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/251867

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