An investigation of the trade-off between gain and base doping in polysilicon emitter bipolar transistors
Cuthbertson, A and Ashburn, P (1985) An investigation of the trade-off between gain and base doping in polysilicon emitter bipolar transistors. Trans Electron Devices, ED-32, 2399-2407.
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| Item Type: | Other |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 251868 |
| Date Deposited: | 15 Nov 1999 |
| Last Modified: | 02 Mar 2012 13:18 |
| Contributors: | Cuthbertson, A (Author) Ashburn, P (Author) |
| Date: | 1985 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/251868 |
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