An investigation of the trade-off between gain and base doping in polysilicon emitter bipolar transistors


Cuthbertson, A and Ashburn, P (1985) An investigation of the trade-off between gain and base doping in polysilicon emitter bipolar transistors. Trans Electron Devices, ED-32, 2399-2407.

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Item Type: Other
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 251868
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1985Published
Date Deposited: 15 Nov 1999
Last Modified: 31 Mar 2016 13:52
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/251868

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