TEM investigation of the effect of anneal temperature and arsenic concentration on the polysilicon/thin oxide/single-crystal silicon emitter of a new high-performance bipolar transistor
Jorgensen, N, Barry, J C, Booker, G R, Ashburn, P, Wolstenholme, G R, Wilson, M C and Hunt, P C (1985) TEM investigation of the effect of anneal temperature and arsenic concentration on the polysilicon/thin oxide/single-crystal silicon emitter of a new high-performance bipolar transistor. IOP Conference Series, 76, (Sectio), 471-474.
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| Item Type: | Other |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 251895 |
| Date Deposited: | 16 Nov 1999 |
| Last Modified: | 02 Mar 2012 12:19 |
| Contributors: | Jorgensen, N (Author) Barry, J C (Author) Booker, G R (Author) Ashburn, P (Author) Wolstenholme, G R (Author) Wilson, M C (Author) Hunt, P C (Author) |
| Date: | 1985 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/251895 |
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