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A model for boron diffusion in p+, n+ and lightly doped silicon

A model for boron diffusion in p+, n+ and lightly doped silicon
A model for boron diffusion in p+, n+ and lightly doped silicon
Champ, P
871d2e8f-4cef-45b2-9ac3-607f366dc5b2
Cowern, N E B
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Godfrey, D J
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Willoughby, A F
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Evans, A G R
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Champ, P
871d2e8f-4cef-45b2-9ac3-607f366dc5b2
Cowern, N E B
40d23c5f-9d5d-438a-ba63-482c53a5c33a
Godfrey, D J
86f29c09-10d6-4436-afca-bb65f85bcf6c
Willoughby, A F
4cfa50bd-a80a-4aea-80be-0c478b04525f
Evans, A G R
c4a3f208-8fd9-491d-870f-ce7eef943311

Champ, P, Cowern, N E B, Godfrey, D J, Willoughby, A F and Evans, A G R (1986) A model for boron diffusion in p+, n+ and lightly doped silicon.

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More information

Published date: September 1986
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 252031
URI: http://eprints.soton.ac.uk/id/eprint/252031
PURE UUID: c7b9099e-3911-4c59-90f1-9cfd2cb0ad6e

Catalogue record

Date deposited: 30 Nov 1999
Last modified: 07 Dec 2023 18:01

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Contributors

Author: P Champ
Author: N E B Cowern
Author: D J Godfrey
Author: A F Willoughby
Author: A G R Evans

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