A model for boron diffusion in p+, n+ and lightly doped silicon


Champ, P, Cowern, N E B, Godfrey, D J, Willoughby, A F and Evans, A G R (1986) A model for boron diffusion in p+, n+ and lightly doped silicon.

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Item Type: Other
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 252031
Date Deposited: 30 Nov 1999
Last Modified: 27 Mar 2014 19:53
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/252031

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