A model for boron diffusion in p+, n+ and lightly doped silicon
Champ, P, Cowern, N E B, Godfrey, D J, Willoughby, A F and Evans, A G R (1986) A model for boron diffusion in p+, n+ and lightly doped silicon.
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| Item Type: | Other |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 252031 |
| Date Deposited: | 30 Nov 1999 |
| Last Modified: | 02 Mar 2012 11:56 |
| Contributors: | Champ, P (Author) Cowern, N E B (Author) Godfrey, D J (Author) Willoughby, A F (Author) Evans, A G R (Author) |
| Date: | September 1986 |
| Status: | Published |
| Publisher: | 16th European Solid State Device Research Conference, Cambridge |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/252031 |
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