Transient scanning electron beam annealing methods used to study diffusion and defects in implanted silicon
Hart, M J, Evans, A G R and Amaratunga, G A J (1986) Transient scanning electron beam annealing methods used to study diffusion and defects in implanted silicon. MRS Proc., 71, 429-434.
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| Item Type: | Other |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 252035 |
| Date Deposited: | 30 Nov 1999 |
| Last Modified: | 02 Mar 2012 13:40 |
| Contributors: | Hart, M J (Author) Evans, A G R (Author) Amaratunga, G A J (Author) |
| Date: | 1986 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/252035 |
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