Transient scanning electron beam annealing methods used to study diffusion and defects in implanted silicon


Hart, M J, Evans, A G R and Amaratunga, G A J (1986) Transient scanning electron beam annealing methods used to study diffusion and defects in implanted silicon. MRS Proc., 71, 429-434.

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Item Type: Other
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 252035
Date Deposited: 30 Nov 1999
Last Modified: 27 Mar 2014 19:53
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/252035

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