A study of diffusion, clustering and defects in As+ and BF2+ implanted silicon during scanning electron beam annealing


Hart, M J, Evans, A G R, Amaratunga, G A J and Altrip, J L (1987) A study of diffusion, clustering and defects in As+ and BF2+ implanted silicon during scanning electron beam annealing. MRS Proc., 92, 27-32.

Download

Full text not available from this repository.

Item Type: Other
Divisions: Faculty of Physical and Applied Science > Electronics and Computer Science > NANO
Item ID: 252036
Date Deposited: 30 Nov 1999
Last Modified: 02 Mar 2012 13:18
Contributors: Hart, M J (Author)
Evans, A G R (Author)
Amaratunga, G A J (Author)
Altrip, J L (Author)
Date: 1987
Status: Published
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/252036

Actions (login required)

View Item View Item