Self-aligned bipolar transistors with enhanced efficiency polysilicon emitters
Cuthbertson, A and Ashburn, P (1984) Self-aligned bipolar transistors with enhanced efficiency polysilicon emitters. IEEE IEDM Technical Digest, 794-797.
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| Item Type: | Other |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 252045 |
| Date Deposited: | 01 Dec 1999 |
| Last Modified: | 02 Mar 2012 13:40 |
| Contributors: | Cuthbertson, A (Author) Ashburn, P (Author) |
| Date: | 1984 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/252045 |
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