Self-aligned bipolar transistors with enhanced efficiency polysilicon emitters


Cuthbertson, A and Ashburn, P (1984) Self-aligned bipolar transistors with enhanced efficiency polysilicon emitters. IEEE IEDM Technical Digest, 794-797.

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Item Type: Other
Divisions : Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 252045
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1984Published
Date Deposited: 01 Dec 1999
Last Modified: 31 Mar 2016 13:52
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/252045

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