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Self-aligned bipolar transistors with enhanced efficiency polysilicon emitters

Self-aligned bipolar transistors with enhanced efficiency polysilicon emitters
Self-aligned bipolar transistors with enhanced efficiency polysilicon emitters
Cuthbertson, A
21e55395-32f1-4f93-a91d-0d5c2477a1d4
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Cuthbertson, A
21e55395-32f1-4f93-a91d-0d5c2477a1d4
Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038

Cuthbertson, A and Ashburn, P (1984) Self-aligned bipolar transistors with enhanced efficiency polysilicon emitters.

Record type: Other

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More information

Published date: 1984
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 252045
URI: http://eprints.soton.ac.uk/id/eprint/252045
PURE UUID: 235893bb-ecbd-4aa5-8b71-ed4d563527de

Catalogue record

Date deposited: 01 Dec 1999
Last modified: 10 Dec 2021 20:24

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Contributors

Author: A Cuthbertson
Author: P Ashburn

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