Observations of dislocations and junction irregularities in bipolar transistors using the EBIC mode of the SEM
Ashburn, P and Bull, C J (1979) Observations of dislocations and junction irregularities in bipolar transistors using the EBIC mode of the SEM. Solid State Electronics, 22, 105-110.
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| Item Type: | Other |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 252056 |
| Date Deposited: | 07 Dec 1999 |
| Last Modified: | 02 Mar 2012 13:18 |
| Contributors: | Ashburn, P (Author) Bull, C J (Author) |
| Date: | 1979 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/252056 |
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