Effects of dislocations in silicon transistors with implanted emitters


Bull, C J, Ashburn, P, Booker, G R and Nicholas, K H (1979) Effects of dislocations in silicon transistors with implanted emitters. Solid State Electronics, 22, 95-104.

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Item Type: Other
Divisions: Faculty of Physical and Applied Science > Electronics and Computer Science > NANO
Item ID: 252058
Date Deposited: 07 Dec 1999
Last Modified: 02 Mar 2012 14:02
Contributors: Bull, C J (Author)
Ashburn, P (Author)
Booker, G R (Author)
Nicholas, K H (Author)
Date: 1979
Status: Published
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/252058

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