Effects of dislocations in silicon transistors with implanted bases
Ashburn, P, Bull, C J, Nicholas, K H and Booker, G R (1977) Effects of dislocations in silicon transistors with implanted bases. Solid State Electronics, 20, 731-740.
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| Item Type: | Other |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 252059 |
| Date Deposited: | 07 Dec 1999 |
| Last Modified: | 02 Mar 2012 11:38 |
| Contributors: | Ashburn, P (Author) Bull, C J (Author) Nicholas, K H (Author) Booker, G R (Author) |
| Date: | 1977 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/252059 |
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