Effects of dislocations in silicon transistors with implanted bases


Ashburn, P, Bull, C J, Nicholas, K H and Booker, G R (1977) Effects of dislocations in silicon transistors with implanted bases. Solid State Electronics, 20, 731-740.

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Item Type: Other
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 252059
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1977Published
Date Deposited: 07 Dec 1999
Last Modified: 31 Mar 2016 13:52
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/252059

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