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A theoretical and experimental study of recombination centres in silicon p-n junctions

A theoretical and experimental study of recombination centres in silicon p-n junctions
A theoretical and experimental study of recombination centres in silicon p-n junctions
Ashburn, P
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Morgan, D V
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Howes, M J
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Ashburn, P
68cef6b7-205b-47aa-9efb-f1f09f5c1038
Morgan, D V
c7658319-794f-4e20-9ad7-d2e7e37e956a
Howes, M J
fb34cba2-fffc-46ab-987e-0805b6ab78c9

Ashburn, P, Morgan, D V and Howes, M J (1975) A theoretical and experimental study of recombination centres in silicon p-n junctions.

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More information

Published date: 1975
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 252061
URI: http://eprints.soton.ac.uk/id/eprint/252061
PURE UUID: 1b6740a7-a91a-45e4-bd6e-170cb3155d05

Catalogue record

Date deposited: 07 Dec 1999
Last modified: 10 Dec 2021 20:24

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Contributors

Author: P Ashburn
Author: D V Morgan
Author: M J Howes

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