A theoretical and experimental study of recombination centres in silicon p-n junctions
Ashburn, P, Morgan, D V and Howes, M J (1975) A theoretical and experimental study of recombination centres in silicon p-n junctions. Solid State Electronics, 18, 569-577.
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| Item Type: | Other |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 252061 |
| Date Deposited: | 07 Dec 1999 |
| Last Modified: | 02 Mar 2012 12:57 |
| Contributors: | Ashburn, P (Author) Morgan, D V (Author) Howes, M J (Author) |
| Date: | 1975 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/252061 |
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