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Model for Phosphorus diffusion in silicon during rapid thermal annealing

Model for Phosphorus diffusion in silicon during rapid thermal annealing
Model for Phosphorus diffusion in silicon during rapid thermal annealing
Nanu, L
83e56023-b0b1-4b4f-a87b-3bbe8058ecc8
Evans, A G R
c4a3f208-8fd9-491d-870f-ce7eef943311
Nanu, L
83e56023-b0b1-4b4f-a87b-3bbe8058ecc8
Evans, A G R
c4a3f208-8fd9-491d-870f-ce7eef943311

Nanu, L and Evans, A G R (1988) Model for Phosphorus diffusion in silicon during rapid thermal annealing.

Record type: Other

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More information

Published date: December 1988
Additional Information: Address: Nottingham
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 252066
URI: http://eprints.soton.ac.uk/id/eprint/252066
PURE UUID: f8514eaa-8a58-459b-9bbd-ed716cfc56e6

Catalogue record

Date deposited: 09 Dec 1999
Last modified: 10 Dec 2021 20:24

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Contributors

Author: L Nanu
Author: A G R Evans

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