Model for Phosphorus diffusion in silicon during rapid thermal annealing
Nanu, L and Evans, A G R (1988) Model for Phosphorus diffusion in silicon during rapid thermal annealing.
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| Item Type: | Other |
|---|---|
| Additional Information: | Address: Nottingham |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 252066 |
| Date Deposited: | 09 Dec 1999 |
| Last Modified: | 02 Mar 2012 13:40 |
| Contributors: | Nanu, L (Author) Evans, A G R (Author) |
| Date: | December 1988 |
| Additional Information: | Address: Nottingham |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/252066 |
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