Model for Phosphorus diffusion in silicon during rapid thermal annealing


Nanu, L and Evans, A G R (1988) Model for Phosphorus diffusion in silicon during rapid thermal annealing.

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Item Type: Other
Additional Information: Address: Nottingham
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 252066
Date Deposited: 09 Dec 1999
Last Modified: 27 Mar 2014 19:53
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/252066

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