Thick selective expitaxial growth of silicon at 960oC using silane only
Afshar-Nanaii, N, Bonar, J M, Evans, A G R, Parker, G J and Starbuck, C M K (1991) Thick selective expitaxial growth of silicon at 960oC using silane only.
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| Item Type: | Other |
|---|---|
| Additional Information: | Address: Montreux |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 252242 |
| Date Deposited: | 07 Jan 2000 |
| Last Modified: | 02 Mar 2012 12:38 |
| Contributors: | Afshar-Nanaii, N (Author) Bonar, J M (Author) Evans, A G R (Author) Parker, G J (Author) Starbuck, C M K (Author) |
| Date: | 1991 |
| Additional Information: | Address: Montreux |
| Status: | Published |
| Publisher: | ESSDERC 91 |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/252242 |
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