Thick selective expitaxial growth of silicon at 960oC using silane only


Afshar-Nanaii, N, Bonar, J M, Evans, A G R, Parker, G J and Starbuck, C M K (1991) Thick selective expitaxial growth of silicon at 960oC using silane only.

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Item Type: Other
Additional Information: Address: Montreux
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 252242
Date Deposited: 07 Jan 2000
Last Modified: 27 Mar 2014 19:54
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/252242

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