Submicron CMOS devices utilising selective epitaxial (SEG) of silicon using silane only


Afshar-Nanaii, N, Evans, A G R and Starbuck, C M K (1992) Submicron CMOS devices utilising selective epitaxial (SEG) of silicon using silane only.

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Item Type: Other
Additional Information: ESSDERC. Address: Leuven
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 252246
Date Deposited: 10 Jan 2000
Last Modified: 27 Mar 2014 19:54
Publisher: 22nd European Solid State device research conference
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/252246

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