Long incubation times for selective epitaxal growth of silicon using silane only


Parker, G J, Bonar, J M and Starbuck, C M K (1991) Long incubation times for selective epitaxal growth of silicon using silane only. Elec Letts, 27, (17), 1595-1597.

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Item Type: Other
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 252422
Date Deposited: 27 Jan 2000
Last Modified: 27 Mar 2014 19:54
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/252422

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