Long incubation times for selective epitaxal growth of silicon using silane only
Parker, G J, Bonar, J M and Starbuck, C M K (1991) Long incubation times for selective epitaxal growth of silicon using silane only. Elec Letts, 27, (17), 1595-1597.
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| Item Type: | Other |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 252422 |
| Date Deposited: | 27 Jan 2000 |
| Last Modified: | 02 Mar 2012 12:19 |
| Contributors: | Parker, G J (Author) Bonar, J M (Author) Starbuck, C M K (Author) |
| Date: | August 1991 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/252422 |
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