Regrowth Behaviour of Si 1 - x Gex/Si Structures formed by Ge+ Ion-Implantation and Post Amorphisation


Zhang, J P, Wilson, R J, Hemment, P L F, Claverie, A, Cristiano, F, Sallers, P, Wen, J Q, Evans, J H, Peaker, A R and Parker, G J (1994) Regrowth Behaviour of Si 1 - x Gex/Si Structures formed by Ge+ Ion-Implantation and Post Amorphisation. Nuclear Instruments & Methods in Physics Research, Section B, Beam Interactions with Materials and Atoms, 84, (2), 222 - 228.

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Item Type: Other
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 252426
Date Deposited: 27 Jan 2000
Last Modified: 27 Mar 2014 19:54
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/252426

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