Regrowth Behaviour of Si 1 - x Gex/Si Structures formed by Ge+ Ion-Implantation and Post Amorphisation
Zhang, J P, Wilson, R J, Hemment, P L F, Claverie, A, Cristiano, F, Sallers, P, Wen, J Q, Evans, J H, Peaker, A R and Parker, G J (1994) Regrowth Behaviour of Si 1 - x Gex/Si Structures formed by Ge+ Ion-Implantation and Post Amorphisation. Nuclear Instruments & Methods in Physics Research, Section B, Beam Interactions with Materials and Atoms, 84, (2), 222 - 228.
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| Item Type: | Other |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 252426 |
| Date Deposited: | 27 Jan 2000 |
| Last Modified: | 02 Mar 2012 12:38 |
| Contributors: | Zhang, J P (Author) Wilson, R J (Author) Hemment, P L F (Author) Claverie, A (Author) Cristiano, F (Author) Sallers, P (Author) Wen, J Q (Author) Evans, J H (Author) Peaker, A R (Author) Parker, G J (Author) |
| Date: | 1994 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/252426 |
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