Selective low pressure chemical vapour deposition epitaxy using silance only for advanced device applications
Parker, G J and Bonar, J M (1995) Selective low pressure chemical vapour deposition epitaxy using silance only for advanced device applications. Materials Science & Technology, 11, 31 - 35.
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| Item Type: | Other |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 252427 |
| Date Deposited: | 27 Jan 2000 |
| Last Modified: | 01 Mar 2012 10:30 |
| Contributors: | Parker, G J (Author) Bonar, J M (Author) |
| Date: | January 1995 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/252427 |
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