Selective low pressure chemical vapour deposition epitaxy using silance only for advanced device applications


Parker, G J and Bonar, J M (1995) Selective low pressure chemical vapour deposition epitaxy using silance only for advanced device applications. Materials Science & Technology, 11, 31 - 35.

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Item Type: Other
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 252427
Date Deposited: 27 Jan 2000
Last Modified: 27 Mar 2014 19:54
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/252427

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