Reduction of hot-electron degradation in NMOSFETS with elevated sources and drains realised by SEG of silicon using silane only


Afshar-Nanaii, N, Peerlings, J, Evans, A G R and Carter, J C (1993) Reduction of hot-electron degradation in NMOSFETS with elevated sources and drains realised by SEG of silicon using silane only.

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Item Type: Other
Additional Information: Address: Grenoble
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 252435
Date Deposited: 28 Jan 2000
Last Modified: 27 Mar 2014 19:54
Publisher: ESSDERC
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/252435

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