Lander, R J P, Emeleus, C J, Parker, E H C, Whall, T E, Kennedy, G P, Sidek, R and Evans, A G R (1995) A study of Hall and field effect mobilities in a Si/Si0.8Ge0.2 p-channel MOS heterostructure. CMMP '95.
Record type:
Conference or Workshop Item
(Paper)
Abstract
SSb.P44,
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More information
Published date: December 1995
Additional Information:
Address: Liverpool
Venue - Dates:
CMMP '95, 1995-01-01
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 252443
URI: http://eprints.soton.ac.uk/id/eprint/252443
PURE UUID: 348f483a-2738-49bc-96c3-506f64820f9a
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Date deposited: 28 Jan 2000
Last modified: 07 Mar 2024 17:47
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Contributors
Author:
R J P Lander
Author:
C J Emeleus
Author:
E H C Parker
Author:
T E Whall
Author:
G P Kennedy
Author:
R Sidek
Author:
A G R Evans
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