A study of Hall and field effect mobilities in a Si/Si0.8Ge0.2 p-channell MOS heterostructure
Lander, R J P, Emeleus, C J, Parker, E H C, Whall, T E, Kennedy, G P, Sidek, R and Evans, A G R (1995) A study of Hall and field effect mobilities in a Si/Si0.8Ge0.2 p-channell MOS heterostructure. , 147.
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Description/Abstract
SSb.P44,
| Item Type: | Other |
|---|---|
| Additional Information: | Address: Liverpool |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 252443 |
| Date Deposited: | 28 Jan 2000 |
| Last Modified: | 02 Mar 2012 12:57 |
| Contributors: | Lander, R J P (Author) Emeleus, C J (Author) Parker, E H C (Author) Whall, T E (Author) Kennedy, G P (Author) Sidek, R (Author) Evans, A G R (Author) |
| Date: | December 1995 |
| Additional Information: | Address: Liverpool |
| Status: | Published |
| Publisher: | IOP CMMp95 Meeting |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/252443 |
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