A sutdy of Hall and field effect mobilities in a Si/Si0.8Ge0.2 p channel MOS heterostructure


Lander, R J P, Emeleus, C J, Parker, E H C, Whall, T E, Kennedy, G P, Sidek, R and Evans, A G R (1996) A sutdy of Hall and field effect mobilities in a Si/Si0.8Ge0.2 p channel MOS heterostructure.

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Item Type: Other
Additional Information: MRS Spring 96 Meeting. Address: San Fransisco
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science
ePrint ID: 252444
Date Deposited: 28 Jan 2000
Last Modified: 27 Mar 2014 19:54
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/252444

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