A sutdy of Hall and field effect mobilities in a Si/Si0.8Ge0.2 p channel MOS heterostructure
Lander, R J P, Emeleus, C J, Parker, E H C, Whall, T E, Kennedy, G P, Sidek, R and Evans, A G R (1996) A sutdy of Hall and field effect mobilities in a Si/Si0.8Ge0.2 p channel MOS heterostructure.
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| Item Type: | Other |
|---|---|
| Additional Information: | MRS Spring 96 Meeting. Address: San Fransisco |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science |
| Item ID: | 252444 |
| Date Deposited: | 28 Jan 2000 |
| Last Modified: | 01 Mar 2012 10:30 |
| Contributors: | Lander, R J P (Author) Emeleus, C J (Author) Parker, E H C (Author) Whall, T E (Author) Kennedy, G P (Author) Sidek, R (Author) Evans, A G R (Author) |
| Date: | April 1996 |
| Additional Information: | MRS Spring 96 Meeting. Address: San Fransisco |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/252444 |
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