Fully self-aligned Si bipolar transistor with collector and base grown using silane-only selective epitaxy
Gregory, H J, Bonar, J M, Ashburn, P and Parker, G J (1996) Fully self-aligned Si bipolar transistor with collector and base grown using silane-only selective epitaxy. Electronics Letters, 32, (9), 850 - 851.
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| Item Type: | Other |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 252486 |
| Date Deposited: | 31 Jan 2000 |
| Last Modified: | 02 Mar 2012 14:01 |
| Contributors: | Gregory, H J (Author) Bonar, J M (Author) Ashburn, P (Author) Parker, G J (Author) |
| Date: | April 1996 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/252486 |
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