Fully self-aligned Si bipolar transistor with collector and base grown using silane-only selective epitaxy


Gregory, H J, Bonar, J M, Ashburn, P and Parker, G J (1996) Fully self-aligned Si bipolar transistor with collector and base grown using silane-only selective epitaxy. Electronics Letters, 32, (9), 850 - 851.

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Item Type: Other
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 252486
Date Deposited: 31 Jan 2000
Last Modified: 27 Mar 2014 19:54
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/252486

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