Effect of transistor geometry on the electrical characteristics of SiGe heterjunction bipolar transistors at low temperaturessn
Hashim, M D, Lever, R F, Ashburn, P and Parker, G J (1996) Effect of transistor geometry on the electrical characteristics of SiGe heterjunction bipolar transistors at low temperaturessn. Journal de Physique,Colloque 3, 6, 119 - 124.
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| Item Type: | Other |
|---|---|
| Additional Information: | Chapter: 3 |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 252487 |
| Date Deposited: | 31 Jan 2000 |
| Last Modified: | 02 Mar 2012 12:18 |
| Contributors: | Hashim, M D (Author) Lever, R F (Author) Ashburn, P (Author) Parker, G J (Author) |
| Date: | April 1996 |
| Additional Information: | Chapter: 3 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/252487 |
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