Effect of transistor geometry on the electrical characteristics of SiGe heterjunction bipolar transistors at low temperaturessn


Hashim, M D, Lever, R F, Ashburn, P and Parker, G J (1996) Effect of transistor geometry on the electrical characteristics of SiGe heterjunction bipolar transistors at low temperaturessn. Journal de Physique,Colloque 3, 6, 119 - 124.

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Item Type: Other
Additional Information: Chapter: 3
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 252487
Date Deposited: 31 Jan 2000
Last Modified: 27 Mar 2014 19:54
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/252487

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