Measurements of very long generation lifetimes in Si and SiGe epi-layers produced by LPCVD using MOS capacitors formed by plasma anodisation


Wu, Z Y, Hall, S, Bonar, J M and Parker, G J (1997) Measurements of very long generation lifetimes in Si and SiGe epi-layers produced by LPCVD using MOS capacitors formed by plasma anodisation. Electronics Letters, 33, (10), 909 - 911.

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Item Type: Other
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 252491
Date Deposited: 31 Jan 2000
Last Modified: 27 Mar 2014 19:54
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/252491

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