Measurements of very long generation lifetimes in Si and SiGe epi-layers produced by LPCVD using MOS capacitors formed by plasma anodisation
Wu, Z Y, Hall, S, Bonar, J M and Parker, G J (1997) Measurements of very long generation lifetimes in Si and SiGe epi-layers produced by LPCVD using MOS capacitors formed by plasma anodisation. Electronics Letters, 33, (10), 909 - 911.
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| Item Type: | Other |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 252491 |
| Date Deposited: | 31 Jan 2000 |
| Last Modified: | 02 Mar 2012 13:39 |
| Contributors: | Wu, Z Y (Author) Hall, S (Author) Bonar, J M (Author) Parker, G J (Author) |
| Date: | May 1997 |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/252491 |
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