The University of Southampton
University of Southampton Institutional Repository

Single-hole tunneling in SiGe nanostructures

Single-hole tunneling in SiGe nanostructures
Single-hole tunneling in SiGe nanostructures
We have fabricated quantum dots and quantum wires in p-type silicon germanium grown on SOI substrates. Electrical characteristics at low temperature show clear Coulomb blockade and Coulomb staircases in both structures. Gate-controlled experiments show conductance oscillations with a single period in quantum dots and multiple periods in quantum wires. While single-hole tunnelling is easily achieved in quantum dots, a more complicated hole transport results in quantum wires with a narrow control range for a true single-hole tunnelling.
0167-9317
137-140
Kanjanachuchai, S.
44e83567-0bea-4e7a-b5e6-d6ed2ce3f27d
Bonar, J.M.
50b22935-17c1-46ab-88a2-a8f7baabb39a
Parker, G.J.
edf88b88-ba05-48a5-8ae4-d6d6aa984364
Ahmed, H.
4ebe4b2e-14c1-406d-99a5-88ebc6202e9a
Kanjanachuchai, S.
44e83567-0bea-4e7a-b5e6-d6ed2ce3f27d
Bonar, J.M.
50b22935-17c1-46ab-88a2-a8f7baabb39a
Parker, G.J.
edf88b88-ba05-48a5-8ae4-d6d6aa984364
Ahmed, H.
4ebe4b2e-14c1-406d-99a5-88ebc6202e9a

Kanjanachuchai, S., Bonar, J.M., Parker, G.J. and Ahmed, H. (1999) Single-hole tunneling in SiGe nanostructures. Microelectronic Engineering, 46, 137-140. (doi:10.1016/S0167-9317(99)00037-4).

Record type: Article

Abstract

We have fabricated quantum dots and quantum wires in p-type silicon germanium grown on SOI substrates. Electrical characteristics at low temperature show clear Coulomb blockade and Coulomb staircases in both structures. Gate-controlled experiments show conductance oscillations with a single period in quantum dots and multiple periods in quantum wires. While single-hole tunnelling is easily achieved in quantum dots, a more complicated hole transport results in quantum wires with a narrow control range for a true single-hole tunnelling.

This record has no associated files available for download.

More information

Published date: 1 May 1999
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 252552
URI: http://eprints.soton.ac.uk/id/eprint/252552
ISSN: 0167-9317
PURE UUID: 435265f5-7bb9-45cc-961d-1d67d7290cca

Catalogue record

Date deposited: 17 Feb 2000
Last modified: 17 Mar 2024 05:58

Export record

Altmetrics

Contributors

Author: S. Kanjanachuchai
Author: J.M. Bonar
Author: G.J. Parker
Author: H. Ahmed

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of http://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×