Self organized growth of II-VI wide band-gap quantum dot structures

Zhu, Z., Arai, K., Kurtz, E., Chen, Y.F., Tomasini, P., Bagnall, D.M., Lu, F., Sekiguchi, T., Yao, T., Yasuda, T. and Segawa, Y. (1997) Self organized growth of II-VI wide band-gap quantum dot structures. Physica Status Solidi, B, 202 (2), 827-833. (doi:10.1002/1521-3951(199708)202:2<827::AID-PSSB827>3.0.CO;2-8).

Abstract

We present our recent investigations on the self‐organized growth and optical properties of quantum structures including CdSe quantum dots (QDs) embedded in ZnSe, ZnSe QDs in ZnS, and ZnO quantum pyramids. The self‐organized mechanism is shown to play an important role in the formation of CdSe QDs on ZnSe(111). The ZnSe QDs are found to form on a 1 ML thick ZnSe wetting layer embedded in ZnS(100). The self‐organized ZnO quantum pyramids form on ZnO(0001) buffer layers through preferred facet nucleation rather than strain‐induced islanding.

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