Non equilibrium effects during RTA of Boron and Arsenic implants in silicon
Hart, M J, Evans, A G R and Amaratunga, G A J (1986) Non equilibrium effects during RTA of Boron and Arsenic implants in silicon.
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| Item Type: | Other |
|---|---|
| Additional Information: | Alvey Club meeting on process and Device Modelling. Address: Edinburgh |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 252672 |
| Date Deposited: | 10 Mar 2000 |
| Last Modified: | 02 Mar 2012 11:37 |
| Contributors: | Hart, M J (Author) Evans, A G R (Author) Amaratunga, G A J (Author) |
| Date: | 1986 |
| Additional Information: | Alvey Club meeting on process and Device Modelling. Address: Edinburgh |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/252672 |
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