Non equilibrium effects during RTA of Boron and Arsenic implants in silicon


Hart, M J, Evans, A G R and Amaratunga, G A J (1986) Non equilibrium effects during RTA of Boron and Arsenic implants in silicon.

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Item Type: Other
Additional Information: Alvey Club meeting on process and Device Modelling. Address: Edinburgh
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 252672
Date Deposited: 10 Mar 2000
Last Modified: 27 Mar 2014 19:54
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/252672

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