SiGe nMOSFETs with gate oxide grown by low temperature plasma anodisation


Riley, L S, Hall, S, Harris, J, Fernandez, J, Gallas, B, Evans, A G R, Clarke, J F, Humphry, J, Murray, R T and Jeynes, C (2000) SiGe nMOSFETs with gate oxide grown by low temperature plasma anodisation. Microelectronic Engineering An International Journal of Semiconductor Manufacturing Technology, 48, 227-230.

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Item Type: Other
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 252720
Date Deposited: 15 Mar 2000
Last Modified: 27 Mar 2014 19:54
Publisher: MicroElectronic Engineering
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/252720

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