SiGe nMOSFETs with gate oxide grown by low temperature plasma anodisation
Riley, L S, Hall, S, Harris, J, Fernandez, J, Gallas, B, Evans, A G R, Clarke, J F, Humphry, J, Murray, R T and Jeynes, C (2000) SiGe nMOSFETs with gate oxide grown by low temperature plasma anodisation. Microelectronic Engineering An International Journal of Semiconductor Manufacturing Technology, 48, 227-230.
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| Item Type: | Other |
|---|---|
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 252720 |
| Date Deposited: | 15 Mar 2000 |
| Last Modified: | 02 Mar 2012 13:40 |
| Contributors: | Riley, L S (Author) Hall, S (Author) Harris, J (Author) Fernandez, J (Author) Gallas, B (Author) Evans, A G R (Author) Clarke, J F (Author) Humphry, J (Author) Murray, R T (Author) Jeynes, C (Author) |
| Date: | 15 March 2000 |
| Status: | Unpublished |
| Publisher: | MicroElectronic Engineering |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/252720 |
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