Thick selective epitaxial growth of silicon at 960 deg C using silane only
Afshar-Hanaee, N, Bonar, J M, Evans, A G R, Starbuck, C M K, Parker, G J and Kemhadjian, H A (1991) Thick selective epitaxial growth of silicon at 960 deg C using silane only.
Download
Full text not available from this repository.
| Item Type: | Other |
|---|---|
| Additional Information: | Organisation: ESSDERC |
| Divisions: | Faculty of Physical and Applied Science > Electronics and Computer Science > NANO |
| Item ID: | 252794 |
| Date Deposited: | 21 Mar 2000 |
| Last Modified: | 02 Mar 2012 13:18 |
| Contributors: | Afshar-Hanaee, N (Author) Bonar, J M (Author) Evans, A G R (Author) Starbuck, C M K (Author) Parker, G J (Author) Kemhadjian, H A (Author) |
| Date: | 1991 |
| Additional Information: | Organisation: ESSDERC |
| Status: | Published |
| Further Information: | Google Scholar |
| URI: | http://eprints.soton.ac.uk/id/eprint/252794 |
Actions (login required)
 |
View Item |
