Thick selective epitaxial growth of silicon at 960 deg C using silane only


Afshar-Hanaee, N, Bonar, J M, Evans, A G R, Starbuck, C M K, Parker, G J and Kemhadjian, H A (1991) Thick selective epitaxial growth of silicon at 960 deg C using silane only.

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Item Type: Other
Additional Information: Organisation: ESSDERC
Divisions: Faculty of Physical Sciences and Engineering > Electronics and Computer Science > NANO
ePrint ID: 252794
Date Deposited: 21 Mar 2000
Last Modified: 27 Mar 2014 19:54
Further Information:Google Scholar
URI: http://eprints.soton.ac.uk/id/eprint/252794

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